The effect of release-etch processing on surface microstructure stiction
- 2 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A passive polysilicon microstructure is described which has been used to evaluate the stiction or unwanted adhesion occurring after release etch, rinse and dry processing. The results are interpreted in terms of particle adhesion theory. A residue dissolved in the water and redeposited during drying is responsible for one form of adhesion, by solid bridging. A reaction at silicon surfaces immersed in water is suggested as the source of this residue. Formation of a chemical oxide layer to protect the silicon surfaces alleviates adhesion due to this mechanism. Use of a hydrophobic, low surface energy coating that is applied as part of the rinse process is also described.<>Keywords
This publication has 21 references indexed in Scilit:
- IMPLEMENTING APPROXIMATE REGULARITIES EXTENDED ABSTRACTPublished by World Scientific Pub Co Pte Ltd ,2003
- Thermal assembly of polysilicon microstructuresPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Control of residual stress of polysilicon thin films by heavy doping in surface micromachiningPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Operation of sub-micron gap electrostatic comb-drive actuatorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- The non-steady-state bulk generation effect on the C-t transients in an MIS device under linear voltage sweepSolid-State Electronics, 1991
- The role of atmospheric oxygen and water in the generation of water marks on the silicon surface in cleaning processesMaterials Science and Engineering B, 1989
- Control factor of native oxide growth on silicon in air or in ultrapure waterApplied Physics Letters, 1989
- Reaction of water with hydrofluoric acid treated silicon(111) and (100) surfacesJournal of Vacuum Science & Technology A, 1989
- The surface state of Si (100) and (111) wafers after treatment with hydrofluoric acidAIP Conference Proceedings, 1988
- Particle adhesion theory and experimentAdvances in Colloid and Interface Science, 1967