Properties and design theory of ultrafast GaAs metal-semiconductor-metal photodetector with symmetrical Schottky contacts
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (1), 31-35
- https://doi.org/10.1109/16.43797
Abstract
A GaAs metal-semiconductor-metal photodetector fabricated in a symmetrical and interdigital Schottky contact structure on a semi-insulating GaAs substrate is discussed. The device exhibits a high-speed response and a very low dark current, even with a moderate size (200 mu m/sup 2/). Ultrafast responsivity is due to the high drift velocity of the photoelectrons and low capacitance. A design theory for optimum performance which includes a compromise between the circuit time constant and the transit time is described.<>Keywords
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