I n s i t u monitoring by ellipsometry of metalorganic epitaxy of GaAlAs-GaAs superlattice
- 1 March 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (3), 1599-1602
- https://doi.org/10.1063/1.327815
Abstract
In situ ellipsometry has been used to monitor the growth of GaAs‐GaAlAs superlattices by a metalorganic VPE process. The thickness and the regularity of the successive layers can thus be determined. Analysis of transition widths between successive layers is made and compared with results obtained by SIMS depth profiling.Keywords
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