An AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT) for X- and Ku-band power applications
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 713-716 vol.2
- https://doi.org/10.1109/mwsym.1991.147103
Abstract
A PHEMT with record-high output power, gain and power-added efficiency at 10 and 18 GHz has been achieved due to the use of a novel method to improve the gate-drain reverse breakdown voltage. A critical surface problem was uncovered and resolved. Silicon nitride was deposited as surface passivation. The results of this work suggest that, in addition to superior low-noise performance, the PHEMT is also very promising for high-performance, power amplications in the X- to Ku-band frequency range.<>Keywords
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