Analysis of d.c. characteristics of GaAlAsGaAs double heterojunction bipolar transistors
- 28 February 1986
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 29 (2), 141-149
- https://doi.org/10.1016/0038-1101(86)90032-8
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Origin of high offset voltage in an AlGaAs/GaAs heterojunction bipolar transistorApplied Physics Letters, 1984
- Collector/emitter offset voltage in double-heterojunction bipolar transistorsElectronics Letters, 1984
- Double heterojunction AlxGa1-xAs/GaAs bipolar transistors (DHBJT's) by MBE with a current gain of 1650IEEE Electron Device Letters, 1983
- Device modelingProceedings of the IEEE, 1983
- Medium-power GaAs bipolar transistorsMicroelectronics Journal, 1982
- Double heterojunction NpN GaAlAs/GaAs bipolar transistorElectronics Letters, 1982
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982