Fabrication of 2-D photonic bandgap structures in GaAs/AlGaAs
- 18 August 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (17), 1444-1446
- https://doi.org/10.1049/el:19940987
Abstract
The authors report the first realisation of a two-dimensional photonic bandgap structure with a period of λ0/2n in the GaAs/AlGaAs material system. The structure consists of a honeycomb lattice with a wall thickness of ~30 nm and a period of 160 nm. It was found that, to realise patterns of such small size and periodicity, it is crucial to control the shape of the exposed features.Keywords
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