Optically pumped all-epitaxial wafer-fused 1.52 µm vertical-cavity lasers
- 29 April 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (9), 704-706
- https://doi.org/10.1049/el:19940495
Abstract
The authors demonstrate for the first time the room-temperature pulsed operation of all-epitaxial vertical cavity lasers operating at 1.52 µm using optical pumping. The laser cavity is formed by bonding an MOCVD-grown InGaAsP/InP mirror to an MBE-grown AIAs/GaAs mirror using the wafer fusion technique.Keywords
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