1.2–1.6 μm GaxIn1−xAsyP1−y-InP DH lasers grown by LPMOCVD
- 1 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (1), 389-397
- https://doi.org/10.1016/0022-0248(84)90440-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressureJournal of Crystal Growth, 1983
- Low pressure metalorganic chemical vapor deposition of InP and related compoundsJournal of Electronic Materials, 1983
- Very low threshold GaInAsP/InP double-heterostructure lasers grown by LP MOCVDElectronics Letters, 1983
- Aging test of MOCVD shallow proton stripe GaInAsP/InP, DH laser diode emitting at 1.5 μmElectronics Letters, 1983