Low pressure metalorganic chemical vapor deposition of InP and related compounds
- 1 March 1983
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 12 (2), 371-395
- https://doi.org/10.1007/bf02651138
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- TEG in LP-MO CVD Ga0.47In0.53As-InP superlatticeElectronics Letters, 1982
- Room temperature CW operation of GaInAsP/InP double heterostructure diode lasers emitting at 1.5 μm grown by low pressure metalorganic chemical vapour deposition (LP-MO CVD)Electronics Letters, 1982
- The growth and characterization of uniform Ga1-xInxAs (X ≤.25) by Organometallic VPEJournal of Electronic Materials, 1981
- A new approach to MOCVD of indium phosphide and gallium-indium arsenideJournal of Crystal Growth, 1981
- 1.5 μm room-temperature pulsed operation of GaInAsP/InP double heterostructure grown by LP MOCVDElectronics Letters, 1981
- Low threshold GaInAsP/InP lasers with good temperature dependence grown by low pressure MOVPEElectronics Letters, 1981
- Room temperature CW operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.23 μm grown by low-pressure metalorganic chemical vapour depositionElectronics Letters, 1981
- The preparation of Gal-x Inx As by organometallic pyrolysis for homojunction LED’SJournal of Electronic Materials, 1980
- Device quality epitaxial gallium arsenide grown by the metal alkyl-hydride techniqueJournal of Crystal Growth, 1975
- Growth and Properties of Heteroepitaxial GaInAs Alloys on GaAs Substrates Using Trimethylgallium, Triethylindium, and ArsineJournal of the Electrochemical Society, 1975