Dislocations in GaAs produced by device fabrication
- 31 August 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (8), 799-803
- https://doi.org/10.1016/0038-1101(74)90027-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- A contribution to etch polishing of GaAsJournal of Materials Science, 1973
- Effects of diffusion-induced dislocations on the excess low-frequency noiseIEEE Transactions on Electron Devices, 1973
- Degradation of a Gunn diode by dislocations induced during thermocompression bondingApplied Physics Letters, 1972
- Influence of Thermocompression on GaAs Crystal for Gunn DiodeJapanese Journal of Applied Physics, 1972
- Mechanically induced surface damage in gallium arsenideSolid-State Electronics, 1970
- The Depth of Mechanical Damage in Gallium ArsenideJournal of the Electrochemical Society, 1965