Spatial fluctuations of carrier density in n type GaxIn1−xSb determined by SH-DH effect
- 1 February 1975
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 16 (3), 289-292
- https://doi.org/10.1016/0038-1098(75)90170-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Piezoreflectance measurements on GaxIn1−x Sb alloysJournal of Physics and Chemistry of Solids, 1974
- The lifetime of electrons in InSb, studied using the de Haas-van Alphen effectJournal of Physics C: Solid State Physics, 1972
- Elastic Electron Scattering in InSb‐Type SemiconductorsPhysica Status Solidi (b), 1971
- de Haas—van Alphen Effect innInSbPhysical Review B, 1971
- Electron scattering and transport phenomena in n-InSbJournal of Physics and Chemistry of Solids, 1971
- Screening-Enhanced Shubnikov-de Haas Oscillations in Sb-Doped Gray TinPhysical Review Letters, 1967