Gigantic negative transconductance and mobility modulation in a double-quantum-well structure via gate-controlled resonant coupling

Abstract

Transport of two‐dimensional electrons in a novel double‐quantum‐well (DQW) field‐effect transistor was systematically studied with emphasis on the effect of resonant interaction. By introducing ionized impurities appropriately into one of the QWs, wave‐function‐dependent scattering process was sensitively controlled by the gate voltage V_g. A prominent valley structure was observed in the channel conductance −V_g characteristics at resonance with the peak‐to‐valley ratio of 3 at 4.2 K. This nonlinear characteristic is caused by the deformation of electron wave functions in the DQW and is found to be well explained by the theoretical calculation. The DQW structure can be utilized for both negative transconductance and velocity modulation devices.