Surface Lattice Strain Relaxation at the Initial Stage of Heteroepitaxial Growth of InxGa1-xAs on GaAs by Molecular Beam Epitaxy
- 1 March 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (3A), L352
- https://doi.org/10.1143/jjap.28.l352
Abstract
The surface morphology, surface lattice parameter, and growth mechanism of epilayers during molecular beam epitaxy are investigated using a reflection high-energy electron diffraction observation system. The intensity and half width of diffraction streaks, together with the surface lattice parameter of In x Ga1-x As grown on (001)GaAs substrates are measured in situ. The growth of In x Ga1-x As is conducted under an As-stabilized growth condition. The Stranski-Krastanov growth mode is dominant at the initial stage of heteroepitaxy. The surface lattice parameters of In x Ga1-x As epilayers match those of GaAs below a critical thickness (h c), while they show an abrupt increase toward a bulk In x Ga1-x As lattice parameter beyond the h c value. The observed h c value almost coincides with the critical thickness for the transition of the growth mode from 2D to 3D.Keywords
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