Localized vibrational modes due to isotopes of nitrogen in gallium phosphide
- 21 August 1972
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 5 (16), L223-L225
- https://doi.org/10.1088/0022-3719/5/16/006
Abstract
Infrared absorption measurements on nitrogen doped gallium phosphide grown by the vapour phase epitaxial technique have revealed localized vibrational mode lines at 495.8 and 480.3 cm-1 due to 14N(P) and 15N(P) respectively. The frequencies of these lines are compared with theoretical values.Keywords
This publication has 14 references indexed in Scilit:
- Boron and carbon impurities in gallium arsenideSolid State Communications, 1972
- Electrical Properties of Carbon-Doped Gallium PhosphideJournal of Applied Physics, 1972
- Localized mode frequency for substitutional impurities in zinc blende type crystalsJournal of Physics and Chemistry of Solids, 1971
- Local vibrational modes of carbon in GaPJournal of Physics C: Solid State Physics, 1970
- Local modes of vibration of isoelectronic impurities in gallium phosphide and gallium arsenideJournal of Physics C: Solid State Physics, 1970
- Infra-red absorption of gallium phosphide containing boronJournal of Physics C: Solid State Physics, 1969
- Infra-red absorption due to localized modes of vibration of impurity complexes in ionic and semiconductor crystalsAdvances in Physics, 1969
- Vibrational Modes of Defects in GaPJournal of Applied Physics, 1969
- Pulling of gallium phosphide crystals by liquid encapsulationJournal of Crystal Growth, 1968
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968