Direct observation of the precession of individual paramagnetic spins on oxidized silicon surfaces
- 22 May 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 62 (21), 2531-2534
- https://doi.org/10.1103/physrevlett.62.2531
Abstract
The precession of individual spins on partially oxidized Si(111) surfaces has been detected using a scanning tunneling microscope. The spin precession in a constant magnetic field induces a modulation in the tunneling current at the Larmor frequency. This radio-frequency signal is shown to be localized over distances less than 10 Å and follows the expected magnetic field dependence.Keywords
This publication has 11 references indexed in Scilit:
- Characterization of electron trapping defects on silicon by scanning tunneling microscopySurface Science, 1987
- ESR studies of O−2 adsorbed on silica gel: Photoformation and rotational dynamicsThe Journal of Chemical Physics, 1986
- Paramagnetic resonance of a new-oxygen-donor related center in siliconPhysical Review B, 1986
- Spatial location of electron trapping defects on silicon by scanning tunneling microscopyApplied Physics Letters, 1986
- Electronic traps and P b centers at the Si/SiO2 interface: Band-gap energy distributionJournal of Applied Physics, 1984
- Tunnel EPR spectroscopyJournal of Physics C: Solid State Physics, 1982
- Surface Studies by Scanning Tunneling MicroscopyPhysical Review Letters, 1982
- Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance IJapanese Journal of Applied Physics, 1971
- Zero-Bias Tunneling Anomalies—Temperature, Voltage, and Magnetic Field DependencePhysical Review B, 1968
- "" Exchange Model of Zero-Bias Tunneling AnomaliesPhysical Review Letters, 1966