Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detector
- 17 August 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (7), 963-965
- https://doi.org/10.1063/1.122053
Abstract
We report InGaAs quantum dot intersubband infrared photodetectors grown by low-pressure metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The optimum growth conditions were studied to obtain uniform InGaAs quantum dots constructed in an InGaP matrix. Normal incidence photoconductivity was observed at a peak wavelength of 5.5 μm with a high responsivity of 130 mA/W and a detectivity of at 77 K.
Keywords
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