Aluminum free GaInP/GaAs quantum well infrared photodetectors for long wavelength detection
- 20 January 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (3), 360-362
- https://doi.org/10.1063/1.118390
Abstract
We demonstrate quantum well infrared photodetectors based on a superlattice structure grown by gas-source molecular beam epitaxy. Wafers were grown with varying well widths. Wells of 40, 65, and 75 Å resulted in peak detection wavelengths of 10.4, 12.8, and 13.3 μm with a cutoff wavelength of 13.5, 15, and 15.5 μm, respectively. The measured peak and cutoff wavelengths match those predicted by eight band theoretical analysis. Measured dark currents were lower than equivalent GaAs/AlGaAs samples.
Keywords
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