Determination of states distribution in hydrogenated amorphous silicon usingMIStunnel junctions

Abstract

Measurements of $I-V$, $G-V$, and $C-V$ characteristics were taken on $\mathrm{MIS}$ tunnel junctions where $M$ is a metal, $I$ is silicon oxide, and $S$ is hydrogenated amorphous silicon, $a$-Si: H. The results indicate a peak in the density of states which lies 0.45 eV below the conduction-band edge. The states distribution concluded from the present study is in good agreement with the conclusions based on field-effect measurements.