New electron trap in p-type Czochralski silicon

Abstract

A new electron trap (acceptor level) was discovered in p‐type Czochralski (CZ) silicon by current transient spectroscopy. The behavior of this trap was found to be similar to that of the oxygen thermal donors; thus, 450 °C annealing increases the trap concentration while high‐temperature annealing (1100–1200 °C) leads to the virtual elimination of the trap. The new trap is not observed in either float‐zone or n‐type CZ silicon. Its energy level depends on the group III doping element in the sample. These findings suggest that the trap is related to oxygen, and probably to the acceptor impurity as well.