Saturation radiation effects in MOS devices
- 1 June 1978
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (6), 915-917
- https://doi.org/10.1016/0038-1101(78)90322-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A linear two-layer model for flat-band shift in irradiated MOS devicesSolid-State Electronics, 1976
- Electron irradiation effects in MOS systemsIEEE Transactions on Electron Devices, 1974
- Radiation-induced space-charge buildup in MOS structuresIEEE Transactions on Electron Devices, 1967
- Effects of ionizing radiation on oxidized silicon surfaces and planar devicesProceedings of the IEEE, 1967
- A model for radiation damage in metal-oxide-semiconductor structuresProceedings of the IEEE, 1966