A linear two-layer model for flat-band shift in irradiated MOS devices
- 30 April 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (4), 291-296
- https://doi.org/10.1016/0038-1101(76)90025-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Electron irradiation effects in MOS systemsIEEE Transactions on Electron Devices, 1974
- Charge storage in SiO2 under low-energy electron bombardmentApplied Physics Letters, 1974
- Measured radiation effects in MOS capacitors with a proposed new modelApplied Physics Letters, 1974
- A ‘four parameters’ model that fits the degradation curve ΔVG(VG) of MOS transistors under irradiationSolid-State Electronics, 1972
- Vacuum Ultraviolet Radiation Effects in SiO2IEEE Transactions on Nuclear Science, 1971
- Techniques for Investigating Integrated Circuit Dielectric Isolation MediaIEEE Transactions on Nuclear Science, 1968
- Effects of ionizing radiation on oxidized silicon surfaces and planar devicesProceedings of the IEEE, 1967
- A model for radiation damage in metal-oxide-semiconductor structuresProceedings of the IEEE, 1966