Ultra-Broad-Band GaAs Monolithic Amplifier
- 1 July 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 30 (7), 1027-1033
- https://doi.org/10.1109/tmtt.1982.1131193
Abstract
GaAs monolithic IC design and fabrication techniques suitable for baseband pulse amplification have been developed. The developed GaAs monolithic amplifier has a two-stage construction using two source-grounded FET's. To reduce input VSWR without serious noise-figure degradation, an inter-gate-drain negative feedback circuit was adopted. An interstage circuit is a dc-coupled circuit consisting of an appropriate impedance transmission line. Gate voltage for the second-stage FET is self-biased. The amplifier has 13.5-dB gain over the 3-dB bandwidth from below 500 MHz to 2.8 GHz. Less than 6-dB (7-dB) noise figure was obtained from 700 MHz to 2.2 GHz (150 MHz to 3 GHz). Input VSWR is less than 1.5Keywords
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