Relaxation of photoexcited carriers in GaAs
- 1 December 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (11), 765-768
- https://doi.org/10.1063/1.89541
Abstract
An experiment is described to measure directly the mean free lifetime of the photoexcited carriers in a semi‐insulating crystal by monitoring its photoconductivity.Keywords
This publication has 4 references indexed in Scilit:
- Picosecond optoelectronic switching in GaAsApplied Physics Letters, 1977
- Saturation of impurity photoconductivity in n-GaAs with intense YAG laser lightApplied Physics Letters, 1975
- Translinear circuits: a proposed classificationElectronics Letters, 1975
- Observation of Two-Photon Conductivity in GaAs with Nanosecond and Picosecond Light PulsesApplied Physics Letters, 1972