Ion beam milling of InP with an Ar/O2-gas mixture
- 1 February 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (3), 352-354
- https://doi.org/10.1063/1.94725
Abstract
Ion beam etching has been successfully applied to InP using an Ar/O2‐gas mixture. Varying angles of beam incidence resulted in different shapes of the etched profiles with the achievement even of undercutting. Good selectivity with respect to Novolak‐type photoresists prevails at higher accelerating voltages.Keywords
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