GaInAsP/InP stripe-geometry laser with a reactive-ion-etched facet
- 15 October 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (8), 681-683
- https://doi.org/10.1063/1.92050
Abstract
We report the first use of reactive‐ion etching (RIE) to form mirror facets on GaInAsP/Inp double‐heterostructure (DH) lasers (λ∼1.3 μm). The RIE, performed with a Cl2:O2 gas mixture, provides vertical etched walls with no undercutting. Initial laser results demonstrate that quasi‐single‐mode operation and reasonable threshold currents are possible.Keywords
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