Thin-Film Electroluminescent Device Employing Ta2O5 RF Sputtered Insulating Film

Abstract

In order to fabricate low-voltage-driven high-brightness thin-film electroluminescent devices, the emission characteristics of devices employing low dielectric loss Ta₂O₅ RF-sputtered insulating films have been studied in comparison with those of devices employing Y₂O₃, Sm₂O₃ and Al₂O₃ deposited insulators. It was found that the devices employing Ta₂O₅, RF-sputtered films exhibited higher brightness, lower driving voltage and higher stability than the other devices. In addition, no aging was observed in the Ta₂O₅ insulated devices. These results indicate that the Ta₂O₅ RF-sputtered film is suitable as the insulating film in thin-film electroluminescent devices, and that the properties of the insulating film are closely related to the emission characteristics in such devices.