Fundamental studies on compensation mechanisms in II–VI compounds
- 1 April 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 161 (1-4), 205-213
- https://doi.org/10.1016/0022-0248(95)00641-9
Abstract
No abstract availableKeywords
This publication has 53 references indexed in Scilit:
- Review of Compensation Centres in ZnSe:NPhysica Status Solidi (b), 1995
- Effect of Tilted Substrates on p-Type Doping in ZnSe and ZnCdSe/ZnSe Quantum WellsPhysica Status Solidi (b), 1995
- Doping of wide gap II–VI compoundsJournal of Crystal Growth, 1995
- Doping of ZnTe by molecular beam epitaxyApplied Physics Letters, 1994
- Ohmic contacts and transport properties in ZnSe-based heterostructuresJournal of Crystal Growth, 1994
- Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma sourceApplied Physics Letters, 1993
- Planar-Doping of Molecular Beam Epitaxy Grown ZnSe with Plasma-Excited NitrogenJapanese Journal of Applied Physics, 1993
- Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growthJournal of Crystal Growth, 1991
- Correlation between Fermi Level Stabilization Positions and Maximum Free Carrier Concentrations in III–V Compound SemiconductorsJapanese Journal of Applied Physics, 1990
- Self-compensation in II–VI compoundsProgress in Crystal Growth and Characterization, 1981