Planar-Doping of Molecular Beam Epitaxy Grown ZnSe with Plasma-Excited Nitrogen
- 1 February 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (2B), L229
- https://doi.org/10.1143/jjap.32.l229
Abstract
Planar doping of nitrogen into ZnSe is examined. The dependence of doping efficiency on the particular surface termination (Zn- or Se-stabilised) on (100) ZnSe is investigated through capacitance-voltage measurement and low-temperature photoluminescence (PL) spectroscopy. Using planar doping on the Zn surface, we achieved a hole concentration of 4.5×1017 cm-3, and the PL spectrum is dominated by strong donor-acceptor pair (DAP) emissions. By contrast, the film planar-doped on the Se plane shows rather low hole concentration, and the spectrum is dominated by excitonic features along with very weak DAP emissions.Keywords
This publication has 14 references indexed in Scilit:
- Plasma Doping of Nitrogen in ZnSe Using Electron Cyclotron ResonanceJapanese Journal of Applied Physics, 1992
- ZnSe based multilayer pn junctions as efficient light emitting diodes for display applicationsApplied Physics Letters, 1992
- Planar doping of p-type ZnSe layers with lithium grown by molecular beam epitaxyJournal of Crystal Growth, 1992
- Blue-green laser diodesApplied Physics Letters, 1991
- Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical DopingJapanese Journal of Applied Physics, 1991
- Delta doping of III–V compound semiconductors: Fundamentals and device applicationsJournal of Vacuum Science & Technology A, 1990
- Planar doping with gallium of molecular beam epitaxial ZnSeApplied Physics Letters, 1988
- Molecular beam epitaxial growth of nitrogen-doped ZnSe with ion doping techniqueJournal of Crystal Growth, 1988
- Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300KSolid State Communications, 1987
- Delta- (°-) doping in MBE-grown GaAs: Concept and device applicationJournal of Crystal Growth, 1987