Low-loss GaInAsP buried-heterostructure optical waveguide branches and bends
- 1 February 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (3), 278-280
- https://doi.org/10.1063/1.94746
Abstract
Low-loss GaInAsP buried-heterostructure waveguide branches and bends have been demonstrated using a novel etch and liquid phase epitaxial regrowth technique. Branching losses as low as 0.4 dB at 1.3-μm wavelength for a 1° branch have been achieved. The measured waveguide propagation loss is ≤1.5 cm−1.Keywords
This publication has 3 references indexed in Scilit:
- Electro-optical light modulation in InGaAsP/InP double heterostructure diodesApplied Physics Letters, 1983
- A novel technique for GaInAsP/InP buried heterostructure laser fabricationApplied Physics Letters, 1982
- Single-mode InGaAsP/InP buried waveguide structures grown on channelled {111}B InP substratesElectronics Letters, 1982