Liquid phase epitaxial growth of InGaAsSb on (111)B InAs
- 1 December 1976
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 36 (2), 198-204
- https://doi.org/10.1016/0022-0248(76)90278-5
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Growth and characterization of InGaAsP–InP lattice-matched heterojunctionsJournal of Vacuum Science and Technology, 1976
- Distribution coefficients of Ga, As, and P during growth of InGaAsP layers by liquid-phase epitaxyJournal of Crystal Growth, 1976
- Liquid phase epitaxial growth of InGaAs on InPJournal of Crystal Growth, 1976
- Luminescence and stimulated emission from Gaxln1–xAsySb1–ySoviet Journal of Quantum Electronics, 1976
- Melt removal and planar growth of In1−xGaxP1−zAsz heterojunctionsApplied Physics Letters, 1976
- A new grading layer for liquid epitaxial growth of GaxIn1−xAs on GaAs substrateApplied Physics Letters, 1975
- Growth and Characterization of GaAsSb-GaAlAsSb Lattice-Matched HeterojunctionsJournal of the Electrochemical Society, 1974
- Phase diagram and lattice parameter data for the GaAsySb1−y systemJournal of Electronic Materials, 1973
- Growth and Characterization of InP-lnGaAsP Lattice-Matched HeterojunctionsJournal of the Electrochemical Society, 1973
- Liquid phase epitaxial growth of GaxIn1−xPJournal of Electronic Materials, 1972