Far-infrared absorption spectra measured in InAs/Al0.36Ga0.64Sb quantum wells

Abstract
Far‐infrared absorption spectra have been measured for molecular beam epitaxial InAs/Al0.36Ga0.64Sb multiquantum wells by Fourier transform infrared spectroscopy using light incident normal to the layers. The special band lineup for this heterostructure system causes an overlap of the electron and hole states. The measured absorption peak varies in the wavelength range of 5–10 μm in the temperature range of 100–300 K.