Thin-film transistors fabricated with poly-Si films crystallized at low temperature by microwave annealing
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 20 (1), 2-4
- https://doi.org/10.1109/55.737555
Abstract
Solid phase crystallization of amorphous silicon films for poly-Si thin film transistors (TFTs) has advantages of low cost and excellent uniformity, but the crystallization temperature is too high. Using a microwave annealing method, we lowered the crystallization temperature and shortened the crystallization time. The complete crystallization time at 550/spl deg/C was within 2 h. The device parameters of TFTs with the poly-Si films crystallized by microwave annealing were similar to those of TFTs with the poly-Si films crystallized by conventional furnace annealing. The new crystallization method seems attractive because of low crystallization temperature, short crystallization time, and comparable film properties.Keywords
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