Thallium-doped silicon ionization and excitation levels by infrared absorption
- 1 May 1975
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (5), 2130-2133
- https://doi.org/10.1063/1.321852
Abstract
The thallium ionization level in silicon is the lone group‐III acceptor (of the classical outer s2p atomic configuration) remaining heretofore imprecisely defined. Thallium is also the only such impurity not previously defined as to its bound‐hole (inverse hydrogenic) excitation levels within the energy gap. From room‐temperature infrared absorption data the thallium level is here located at 0.255 eV above the top of the valence band in silicon. This compares with previously reported ionization values of 0.22, 0.26, and 0.30±0.03 eV, all determined by nonoptical methods. Six thallium hydrogenic bound‐hole excitation levels were identified within the energy gap.Keywords
This publication has 11 references indexed in Scilit:
- Absorption spectrum of arsenic doped siliconJournal of Physics and Chemistry of Solids, 1958
- Infrared spectra of Group III acceptors in siliconJournal of Physics and Chemistry of Solids, 1958
- Absorption spectrum of bismuth-doped SiliconJournal of Physics and Chemistry of Solids, 1958
- Tight-bonding calculation of acceptor energies in germanium and siliconJournal of Physics and Chemistry of Solids, 1957
- Absorption spectra of impurities in silicon—IIJournal of Physics and Chemistry of Solids, 1956
- Absorption spectra of impurities in silicon—IJournal of Physics and Chemistry of Solids, 1956
- Concentration Effects on the Line Spectra of Bound Holes in SiliconPhysical Review B, 1956
- Diffusion of Donor and Acceptor Elements in SiliconJournal of Applied Physics, 1956
- Optical Properties of Indium-Doped SiliconPhysical Review B, 1955
- Theory of Donor States in SiliconPhysical Review B, 1955