High-speed photoresponse in a reverse biased InGaAs/InP laser structure at 1.54 μm: Experiment and modeling
- 5 July 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (1), 12-14
- https://doi.org/10.1063/1.109733
Abstract
We report extremely efficient (∼100% internal quantum efficiency) and high-speed (∼120 ps lifetime) photodetection in a reversed biased InGaAs/InP ridge-waveguide multiple quantum well p-i-n laser structure operating at 1.54 μm. The impulse response of this monolithically integratable detector is analyzed in terms of the escape of photogenerated carriers from the InGaAsP quantum well barrier to the InP cladding contact layer.Keywords
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