Fabrication of Large-Area GaN-Based Light-Emitting Diodes on Cu Substrate
- 1 April 2005
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 44 (4S), 2509
- https://doi.org/10.1143/jjap.44.2509
Abstract
A large-area GaN-based light-emitting diode (LED) 1000×1000 µm2 in size with a p-side down configuration was fabricated using wafer bonding and laser lift-off (LLO) techniques. The thin GaN LED was transferred onto a copper substrate without peeling or cracks. The large-area LEDs showed a uniform light-emission pattern over entire defined mesa area without a transparent contact layer on the p-type GaN. The operating current of the large-area LEDs can be driven up to 1000 mA with continuously increasing light output-power. The light output-power is 240 mW with a driving current of 1000 mA. Large-area emission and high current operation make the LLO-LEDs applicable to high-power LED applications.Keywords
This publication has 11 references indexed in Scilit:
- GaN/Mirror/Si Light-Emitting Diodes for Vertical Current Injection by Laser Lift-Off and Wafer Bonding TechniquesJapanese Journal of Applied Physics, 2004
- Performance enhancement of InGaN light-emitting diodes by laser lift-off and transfer from sapphire to copper substrateApplied Physics Letters, 2004
- Nitride-Based LEDs With an SPS Tunneling Contact Layer and an ITO Transparent ContactIEEE Photonics Technology Letters, 2004
- Study of GaN light-emitting diodes fabricated by laser lift-off techniqueJournal of Applied Physics, 2004
- High-efficiency AlGaInP light-emitting diodes for solid-state lighting applicationsJournal of Applied Physics, 2004
- Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-OffJapanese Journal of Applied Physics, 2003
- Efficiency of GaN/InGaN light-emitting diodes with interdigitated mesa geometryApplied Physics Letters, 2001
- High-power AlGaInN flip-chip light-emitting diodesApplied Physics Letters, 2001
- III-nitride blue microdisplaysApplied Physics Letters, 2001
- Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-offApplied Physics Letters, 1999