Vacancy-diffusion model for quenched-in E-centers in CW laser annealed virgin silicon
- 28 February 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 116 (1-3), 547-552
- https://doi.org/10.1016/0378-4363(83)90305-4
Abstract
No abstract availableKeywords
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