Position of the degradation and the improved structure for the buried crescent InGaAsP/InP (1.3 μm) lasers
- 15 July 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (2), 187-189
- https://doi.org/10.1063/1.94275
Abstract
We have found a degradation of the buried crescent (BC) InGaAsP/InP lasers that occurs when the p-n junction plane coincides with the surface exposed in the high-temperature H2 ambient before the melt contact during the liquid phase epitaxial growth. To eliminate the degradation, we have fabricated a new structure of the BC laser and have obtained stable cw operation at 80 °C.Keywords
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