Structure of aluminium oxide films deposited by d.c. reactive sputtering
- 1 July 1980
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 70 (1), 111-116
- https://doi.org/10.1016/0040-6090(80)90418-6
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Direct current reactive sputtering of aluminiumThin Solid Films, 1978
- Influence of Al2O3 Deposition Temperature on Charge-Storage and Retention in MA(O)S StructuresJapanese Journal of Applied Physics, 1972
- Physical and Chemical Properties of Aluminum Oxide Film Deposited by AlCl3-CO2-H2SystemJapanese Journal of Applied Physics, 1972
- Properties of Aluminum Oxide Films Obtained from Nitrous Oxide and Aluminum TrimethylJournal of the Electrochemical Society, 1971
- Transitions in Vapor‐Deposited Alumina from 300° to 1200°CJournal of the American Ceramic Society, 1967
- Phase Changes in Thin Reactively Sputtered Alumina FilmsJournal of the Electrochemical Society, 1966