Direct current reactive sputtering of aluminium
- 29 August 1978
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 52 (3), 365-371
- https://doi.org/10.1016/0040-6090(78)90179-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- D.C. cathode sputtering: influence of the oxygen content in the gas flow on the discharge currentThin Solid Films, 1976
- Interface Properties of Al2O3-Ge Structure and Characteristics of Al2O3-Ge MOS TransistorsJapanese Journal of Applied Physics, 1971
- A spectroscopic investigation of the reactive sputtering of aluminiumThin Solid Films, 1971
- Al2O3-Silicon MOS Field Effect TransistorsJapanese Journal of Applied Physics, 1969
- Phase Changes in Thin Reactively Sputtered Alumina FilmsJournal of the Electrochemical Society, 1966