New high-pressure phase of Si
- 1 April 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 47 (13), 8337-8340
- https://doi.org/10.1103/physrevb.47.8337
Abstract
Angle-dispersive powder-diffraction techniques utilizing an image-plate area detector have been used to reexamine the high-pressure behavior of silicon to ∼18 GPa. We have observed a new intermediate body-centered orthorhombic structure between the well-known Si II (β-tin) and Si V (simple-hexagonal) structures. The existence of such a phase has been considered previously in energy calculations, and may pertain to the observed pressure dependence of the superconducting transition temperature of Si in the 13–18 GPa range.Keywords
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