Annealing behaviour of silicon bombarded with 140 KeV Si++ions
- 1 January 1975
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 25 (3), 213-214
- https://doi.org/10.1080/00337577508235395
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Energy Dependence and Annealing Behaviour of Boron Range Distributions in SiliconPublished by Springer Nature ,1973
- On silicon amorphization during different mass ion implantationRadiation Effects, 1973
- Enhanced Annealing Effects of Boron Implanted Layers in Silicon by Post-Implantation of Silicon IonsPublished by Springer Nature ,1971
- The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into SiliconJournal of the Electrochemical Society, 1971