Enhanced Annealing Effects of Boron Implanted Layers in Silicon by Post-Implantation of Silicon Ions
- 1 January 1971
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The distribution of damage produced by ion implantation of silicon at room temperatureRadiation Effects, 1970
- A model for the formation of amorphous Si by ion bombardmentRadiation Effects, 1970
- POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN SILICONApplied Physics Letters, 1969
- Improved profiles of electrical activity in boron implanted siliconPhysics Letters A, 1968
- ION IMPLANTATION OF SILICON: II. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTSCanadian Journal of Physics, 1967