Calculation of phonons in [001] and [110] SiGe strained-layer superlattices
- 30 June 1989
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 70 (11), 1025-1029
- https://doi.org/10.1016/0038-1098(89)90186-5
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Anisotropy of optical phonons in GaAs-AlAs superlatticesPhysical Review Letters, 1987
- Phonons in semiconductor superlatticesIEEE Journal of Quantum Electronics, 1986
- Physics and applications of GexSi1-x/Si strained-layer heterostructuresIEEE Journal of Quantum Electronics, 1986
- Raman scattering from GexSi1−x/Si strained-layer superlatticesApplied Physics Letters, 1984
- Lattice dynamics of Hittorf's phosphorus and identification of structural groups and defects in amorphous red phosphorusSolid State Communications, 1984
- GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1984
- Lattice Dynamics and Spectroscopic Properties by a Valence Force Potential of Diamondlike Crystals: C, Si, Ge, and SnThe Journal of Chemical Physics, 1972
- Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type SemiconductorsPhysical Review B, 1972
- Valence force potentials for calculating crystal vibrations in siliconJournal of Physics and Chemistry of Solids, 1971
- The use of valence force potentials in calculating crystal vibrationsJournal of Physics and Chemistry of Solids, 1967