Electroluminescence in Amphoteric Silicon-Doped GaAs Diodes. I. Steady-State Response

Abstract

Steady‐state measurements were made of the optical emission and electrical properties of amphoteric Si‐doped GaAs diodes. The width of the emitting region of these diodes is explained in terms of a theory involving the drift of electrons across a semi‐insulating p‐region. At low currents radiative recombination occurs in the p‐region within a diffusion length of the junction. However, at high currents a considerable number of injected electrons drift across the p‐region and light emanates from the entire p‐region. The theory is consistent with the observed I‐V characteristics and also with the spreading of the emission into the p‐region.