Diffusion Coefficients of Impurities in Silicon Melt
- 1 April 1963
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 2 (4), 212-219
- https://doi.org/10.1143/jjap.2.212
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- An Evidence for the Existence of a Diffusion Layer in the Melting Process of SemiconductorsJournal of the Physics Society Japan, 1961
- Solid Solubilities of Impurity Elements in Germanium and Silicon*Bell System Technical Journal, 1960
- Variation of the distribution coefficient and solid solubility with temperatureJournal of Physics and Chemistry of Solids, 1957
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954
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- Distribution of Solute in Crystals Grown from the Melt. Part II. ExperimentalThe Journal of Chemical Physics, 1953
- The Distribution of Solute in Crystals Grown from the Melt. Part I. TheoreticalThe Journal of Chemical Physics, 1953