Diffusion of Impurities in the Semiconductor Melt III. Experimental Determination of Thickness of the Solute Diffusion Layer in the Melting Process

Abstract

The thickness of the solute diffusion layer in the melting process is determined through various experiments which give some informations about the impurity distribution. Experimental results are analyzed using the method of analysis reported in the preceding paper (Japan. J. Appl. Phys. 2 (1963) 220). The existence of the solute diffusion layer in the melting process is confirmed for both germanium and silicon. The thickness of the solute diffusion layer is estimated to be 0.4 mm for germanium and 1 mm for silicon.