Second breakdown—A comprehensive review
- 1 January 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 55 (8), 1272-1288
- https://doi.org/10.1109/proc.1967.5828
Abstract
This paper is a comprehensive review of the published literature dealing with the phenomenon of second breakdown in semiconductor devices and the problems it creates in the design, fabrication, testing, and application of transistors.Keywords
This publication has 76 references indexed in Scilit:
- Experimental study of the effect of junction curvature on breakdown voltage in SiSolid-State Electronics, 1967
- A discussion of some known physical models for second breakdownIEEE Transactions on Electron Devices, 1966
- Current mode second breakdown in epitaxial planar transistorsIEEE Transactions on Electron Devices, 1966
- Second breakdown and crystallographic defects in transistorsIEEE Transactions on Electron Devices, 1966
- Input power induced thermal effects related to transition time between avalanche and second breakdown in p-n silicon junctionsIEEE Transactions on Electron Devices, 1966
- A characterization technique for second breakdown in Ge alloyed junction transistorsIEEE Transactions on Electron Devices, 1966
- Mechanisms Contributing to the Noise Pulse Rate of Avalanche DiodesJournal of Applied Physics, 1965
- "Solder ball" formation in silicon alloy transistorsProceedings of the IEEE, 1965
- Turnover phenomenon of N+N N+plate contact silicon device and second breakdown in transistorsProceedings of the IEEE, 1965
- Secondary breakdown and hot spots in power transistorsProceedings of the IEEE, 1963