Movpe Growth of MCT for LWIR Detectors
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- As diffusion in Hg1-xCdxTe for junction formationSemiconductor Science and Technology, 1993
- Complete in situ laser monitoring of MOCVD HgCdTe/CdTe/ZnTe growth onto GaAs substratesJournal of Crystal Growth, 1992
- p-type doping of metalorganic chemical vapor deposition-grown HgCdTe by arsenic and antimonyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Measurement and control of reagent concentrations in MOCVD reactor using ultrasonicsJournal of Crystal Growth, 1992
- Novel very sensitive analytical technique for compositional analysis of Hg1−xCdxTe epilayersApplied Physics Letters, 1992
- MOVPE growth of HgCdTeSemiconductor Science and Technology, 1991
- A review of impurity behavior in bulk and epitaxial Hg1−xCdxTeJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Impurities and metalorganic chemical-vapor deposition growth of mercury cadmium tellurideJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- The Scope Of MOVPE For Advanced IR CMT DetectorsPublished by SPIE-Intl Soc Optical Eng ,1989
- A new MOVPE technique for the growth of highly uniform CMTJournal of Crystal Growth, 1984