Observation of dipolar interactions in a dilute two-dimensional spin system: °Si ≡ Si3 defects at the (1 1 1)Si/SiO2 interface
- 30 June 1990
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 74 (9), 1003-1008
- https://doi.org/10.1016/0038-1098(90)90474-p
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- The .Si identical to Si3defect at various (111)Si/SiO2and (111)Si/Si3N4interfacesSemiconductor Science and Technology, 1989
- Defects at the Si(111)/interface investigated with low-energy electron diffractionPhysical Review B, 1989
- Theory of thecenter at the Si/interfacePhysical Review B, 1987
- Hyperfine interactions of thecenter at the/Si(111) interfacePhysical Review Letters, 1987
- Dipolar interactions between dangling bonds at the (111) Si-interfacePhysical Review B, 1986
- Interface traps and P b centers in oxidized (100) silicon wafersApplied Physics Letters, 1986
- Strain broadening of the dangling-bond resonance at the (111)Si-interfacePhysical Review B, 1986
- Characterization of Si/SiO2 interface defects by electron spin resonanceProgress in Surface Science, 1983
- Nuclear Magnetic Resonance Line Shapes in SolidsAmerican Journal of Physics, 1970
- Dipolar Broadening of Magnetic Resonance Lines in Magnetically Diluted CrystalsPhysical Review B, 1953