Gas source MEE growth of InGaAs/InP superlattices
- 1 January 1992
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 60-61, 625-630
- https://doi.org/10.1016/0169-4332(92)90486-h
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education
This publication has 9 references indexed in Scilit:
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- Relationship between the conduction-band discontinuities and band-gap differences of InGaAsP/InP heterojunctionsApplied Physics Letters, 1984